Dr. Russell D. Dupuis is the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance Eminent Scholar in the School of Electrical and Computer Engineering at
Georgia Tech with a joint appointment in the School of Materials Science and Engineering. Dr. Dupuis received his BSEE with highest honors-bronze tablet (1970), his MSEE (1971) and his Ph.D
. EE (1973) from the University of Illinois at Urbana-Champaign. In September 1989 he joined the University of Texas at Austin where he established the Advanced Materials and Devices Group to
study novel MOCVD processes and to grow device-quality heterostructure devices and quantum wells using MOCVD. His most recent work involves the MOCVD growth of heteroepitaxial InAlGaN
on sapphire substrates for lasers, LED's, photodetectors, and high-power transistors; the growth of InAlGaAsP-InP lasers; the growth of InGaAs-InP vertical-cavity surface-emitting lasers; and InGaAs
-InP heterojunction bipolar transistors. In addition, he is exploring the III-V "native oxide" materials.
His technical specialties include semiconductor materials and devices, epitaxial growth by metalorganic chemical vapor deposition, and heterojunction structures in III-V compound
semiconductors. Dr. Dupuis is a member of the National Academy of Engineering, the nation's highest honor for engineering professionals.
Research Interests
Semiconductor materials and devices
Epitaxial growth by metalorganic chemical vapor deposition
Heterojunction structures in III-V compound semiconductors